The doi above is for this specific version of this dataset, which is currently the latest. Newer versions may be published in the future. For a link that will always point to the latest version, please use
doi: 10.4121/b7383943-2ae0-4339-8cbf-657765023fd6

Chittock, Nicholas; Mackus, Adrie; Shu, Yi ; Elliott, Simon; Knoops, Harm et. al. (2023): Data underlying the publication: Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3 . Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/b7383943-2ae0-4339-8cbf-657765023fd6.v1

Dataset

• Other Physical Sciences
• Atomic, Molecular, Nuclear, Particle and Plasma Physics
• Physical Sciences

density functional theory (DFT), GaN, Plasma isotropic atomic layer etching, ultrathin films

CC0

RefWorks, BibTeX, Reference Manager, Endnote, DataCite, NLM, DC, CFF

by Nicholas Chittock , Adrie Mackus , Yi Shu , Simon Elliott , Harm Knoops , Erwin Kessels

Dataset to accompany the publication of a manuscript on isotropic plasma ALE of GaN using SF6 plasma and TMA. The initial study focused on DFT simulations using Schrödinger Suites software. Quantum ESPRESSO and Jaguar packages were used to calculate the gibbs free energy change for the ALE reactions to screen the proposed chemistry based on Natarajan-Elliott analysis. Experimental studies were then performed to confirm the predictions from the simulations, with good agreement between the two. Saturation curves, synergy and temperature window were used to characterise the process, with surface roughness and chemical composition used to demonstrate the low damage nature of this etching process.

• 2023-08-21 first online, published, posted

4TU.ResearchData

.opju

Isotropic atomic layer etching of GaN using SF6 2 plasma and Al(CH3)3

• NWO Project 17124 "Atomic Layer Etching: Novel Plasma Processes for Anisotropic ánd Isotropic Etching"

Eindhoven University of Technology, Department of Applied Physics and Science Education