Data underlying the publication: Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3

DOI:10.4121/b7383943-2ae0-4339-8cbf-657765023fd6.v1
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DOI: 10.4121/b7383943-2ae0-4339-8cbf-657765023fd6

Datacite citation style

Chittock, Nicholas; Mackus, Adrie; Shu, Yi ; Elliott, Simon; Knoops, Harm et. al. (2023): Data underlying the publication: Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3 . Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/b7383943-2ae0-4339-8cbf-657765023fd6.v1
Other citation styles (APA, Harvard, MLA, Vancouver, Chicago, IEEE) available at Datacite

Dataset

Dataset to accompany the publication of a manuscript on isotropic plasma ALE of GaN using SF6 plasma and TMA. The initial study focused on DFT simulations using Schrödinger Suites software. Quantum ESPRESSO and Jaguar packages were used to calculate the gibbs free energy change for the ALE reactions to screen the proposed chemistry based on Natarajan-Elliott analysis. Experimental studies were then performed to confirm the predictions from the simulations, with good agreement between the two. Saturation curves, synergy and temperature window were used to characterise the process, with surface roughness and chemical composition used to demonstrate the low damage nature of this etching process.

History

  • 2023-08-21 first online, published, posted

Publisher

4TU.ResearchData

Format

.opju

Funding

  • NWO Project 17124 "Atomic Layer Etching: Novel Plasma Processes for Anisotropic ánd Isotropic Etching"

Organizations

Eindhoven University of Technology, Department of Applied Physics and Science Education

DATA

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