%0 Generic
%A Bavdaz, Luka
%A Eenink, H. G. J.
%A van Staveren, J.
%A Lodari, Mario
%A Almudever, C. G.
%A Clarke, J. S.
%A Sebastiano, F.
%A Veldhorst, Menno
%A Scappucci, Giordano
%D 2022
%T Data underlying the figures in publication: A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
%U https://data.4tu.nl/articles/dataset/Data_underlying_the_figures_in_publication_A_quantum_dot_crossbar_with_sublinear_scaling_of_interconnects_at_cryogenic_temperature/19359560/1
%R 10.4121/19359560.v1
%K Quantum computing
%K crossbar architecture
%K Semiconductors
%K cryogenic
%X Data used in the figures of paper: "A quantum dot crossbar with sublinear scaling
of interconnects at cryogenic temperature". Measurements of a 36x36 gate electrode crossbar, fabricated on an industrial 28Si-MOS stack, that supports 648 narrow-channel field effect transistors for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines.
%I 4TU.ResearchData