Supporting information to derive the figures of the paper: 'Ge wafers for strained quantum wells with low disorder'

DOI:10.4121/52a5bcf9-8e15-4871-b256-10f90e320ecc.v1
The DOI displayed above is for this specific version of this dataset, which is currently the latest. Newer versions may be published in the future. For a link that will always point to the latest version, please use
DOI: 10.4121/52a5bcf9-8e15-4871-b256-10f90e320ecc
Datacite citation style:
Stehouwer, Lucas (2023): Supporting information to derive the figures of the paper: 'Ge wafers for strained quantum wells with low disorder'. Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/52a5bcf9-8e15-4871-b256-10f90e320ecc.v1
Other citation styles (APA, Harvard, MLA, Vancouver, Chicago, IEEE) available at Datacite

Dataset

The data sets are provided to recover each panel of the figures presented in the manuscript 'Ge wafers for strained quantum wells with low disorder'. The data supports observed improvements in both crystal quality as well as transport properties of the Ge quantum well when using Ge wafers as a substrate. The data sets are the raw datasets taken from measurements. Python files are added that we used to analyse and plot the data.

History

  • 2023-05-22 first online, published, posted

Publisher

4TU.ResearchData

Format

.jpg, .tif, .spm, .py, .txt, .npy, .hdf5

Organizations

QuTech and Kavli Institute of Nanoscience, Delft University of Technology

DATA

Files (1)