The doi above is for this specific version of this dataset, which is currently the latest. Newer versions may be published in the future. For a link that will always point to the latest version, please use
doi: 10.4121/17209091

Tosato, Alberto; Beatrice Ferrari; Amir Sammak; Alexander Hamilton; Veldhorst, Menno et. al. (2022): Data underlying the publication: A high-mobility hole bilayer in a germanium double quantum well. Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/17209091.v1

Dataset

• Condensed Matter Physics
• Quantum Physics

Bilayer, double quantum wells, Germanium, Quantum well, symmetric anti-symmetric gap

CC0

RefWorks, BibTeX, Reference Manager, Endnote, DataCite, NLM, DC, CFF

by Alberto Tosato , Beatrice Ferrari , Amir Sammak , Alexander Hamilton , Menno Veldhorst , Giordano Scappucci

The repository contains one dataset of experimental data (resistance as a function of gate voltage and magnetic field) for a tunnel coupled bilayer in Ge/SiGe heterostructure. The repository also contains one dataset with Schrodinger-Poisson simulations of the measured device. All data analysis and plots presented in the paper are included in 3 Jupyter notebooks.

• 2022-03-16 first online, published, posted

4TU.ResearchData

Jupyter Notebook; .ipynb, Phyton Notebook;, .py

• https://doi.org/10.48550/arXiv.2201.06862

Delft University of Technology, QuTech